Vbi ≈ 0.85 V
Vth ≈ 0.64 V
The electron and hole mobilities in silicon at 300 K are: Advanced Semiconductor Fundamentals Solution Manual
where Is is the reverse saturation current, VBE is the base-emitter voltage, and Vt is the thermal voltage. Vbi ≈ 0
Ic = Is * (exp(VBE/Vt) - 1)
